dcr1300l85 phase control thyristor ds5816 - 3 january 2014 (ln 31241 ) 1 / 10 www.dynexsemi.com features ? double side cooling ? high surge capability applications ? high power drives ? high voltage power supplies ? static switches voltage ratings part and ordering number repet itive peak voltages v drm and v rrm v conditions dcr1300l85* dcr1300l80 dcr1300l75 dcr1300l70 8500 8000 7500 7000 t vj = - 40c to 125c, i drm = i rrm = 300ma, v drm , v rrm t p = 10ms, v dsm & v rsm = v drm & v rrm + 100v respectively lower voltage grades av ailable. *8200v @ - 40 0 c, 8500v @ 0 0 c ordering information when ordering, select the required part number shown in the voltage ratings selection table. for example: dcr1300l85 note: please use the complete part number when ordering and quote this num ber in any future correspondence relating to your order. key parameters v drm 8500v i t(av) 1300a i tsm 17600a dv/dt* 1500v/s di/dt 400a/s * higher dv/dt selections available outline type code: l (see package details for further informati on) fig. 1 package outline
semiconductor dcr1300l85 2 / 10 www.dynexsemi.com current ratings t case = 60c unless stated otherwise symbol parameter test conditions max. units double side cooled i t(av) mean on - state current half wave resistive load 1300 a i t(r ms) rms value - 2037 a i t continuous (direct) on - state current - 1963 a surge ratings symbol parameter test conditions max. units i tsm surge (non - repetitive) on - state current 10ms half sine, t case = 125c 17.6 ka i 2 t i 2 t for fusing v r = 0 1.55 ma 2 s thermal and mechanical ratings symbol parameter test conditions min. max. units r th(j - c) thermal resistance C junction to case double side cooled dc - 0.0117 c/w single side cooled anode dc - 0.0187 c/w cathode dc - 0.0329 c/w r th(c - h) thermal resistance C case to heatsink clamping force 37kn double side - 0.0025 c/w (with mounting compound) single side - 0.005 c/w t vj virtual junction temperature blocking v drm / vrrm - 125 c t stg storage temperature range - 55 125 c f m clamping force 33 41 kn
semiconductor dcr1300l85 3 / 10 www.dynexsemi.com dynamic characteristics symbol parameter test conditions min. max. units i rrm /i drm peak reverse and off - state current at v rrm /v drm , t case = 125c - 300 ma dv/dt max. linear rate of rise of off - state voltage to 67% v drm , t j = 125c, gate open - 1500 v/s di/dt rate of rise of on - state current from 67% v drm to 2x i t(av) repetitive 50hz - 200 a/s gate source 30 v, 10 ? , non - repetitive - 400 a/s t r < 0.5s, t j = 125c v t(to) threshold voltage C low level 100a to 2000a at t case = 125c - 1.2 v threshold voltage C high level 2000a to 7000a at t case = 125c - 1.35 v r t on - state slope resistance C lo w level 100a to 2000a at t case = 125c - 0.8615 m ? on - state slope resistance C high level 2000a to 7000a at t case = 125c - 0.767 m ? t gd delay time v d = 67% v drm , gate source 30v, 10 ? - 3 s t r = 0.5s, t j = 25c t q turn - off time t j = 12 5c, v r = 200v, di/dt = 1a/s, - 1200 s dv dr /dt = 20v/s linear q s stored charge i t = 2000a, t j = 125c, di/dt C 1a/s, 4000 6500 c i l latching current t j = 25c, v d = 5v - 3 a i h holding current t j = 25c, r g - k = ? , i tm = 500a, i t = 5 a - 300 ma
semiconductor dcr1300l85 4 / 10 www.dynexsemi.com gate trigger characteristics and ratings symbol parameter test conditions max. units v gt gate trigger voltage v drm = 5v, t case = 25c 1.5 v v gd gate non - trigger voltage at 50% v drm, t case = 125c 0.4 v i gt gate trigger current v drm = 5v, t case = 25c 3 50 ma i gd gate non - trigger current at 50% v drm, t case = 125c 15 ma curves fig.2 maximum & minimum on - state characteristics v tm equation where a = 1.565095 b = - 0.121495 v tm = a + bln (i t ) + c.i t +d. ? i t c = 0.000638 d = 0.021051 these values are valid for t j = 125c for i t 100a to 10000a 0 1000 2000 3000 4000 5000 6000 7000 1.0 2.0 3.0 4.0 5.0 6.0 7.0 instantaneous on-state voltage v t - (v) instantaneous on-state current i t - (a) min 125c max 125c min 25c max 25c
semiconductor dcr1300l85 5 / 10 www.dynexsemi.com fig.3 on - state power dissipation C sine wave fig.4 maximum perm issible case temperature, double side cooled C sine wave fig.5 maximum permissible heatsink temperature, double side cooled C sine wave fig.6 on - state power dissipation C rectangular wave 0 1 2 3 4 5 6 7 8 9 10 11 0 500 1000 1500 2000 mean on-state current, i t(av) - (a) mean power dissipation - (kw) 180 120 90 60 30 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0 500 1000 1500 2000 mean on-state current, i t(av) - (a) maximum case temperature, t case ( o c ) 180 120 90 60 30 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0 500 1000 1500 2000 mean on-state current, i t(av) - (a) maximum heatsink temperature, t heatsink - ( o c ) 180 120 90 60 30 0 1 2 3 4 5 6 7 8 9 10 11 12 0 500 1000 1500 2000 2500 3000 mean on-state current, i t(av) - (a) mean power dissipation - (kw) d.c. 180 120 90 60 30
semiconductor dcr1300l85 6 / 10 www.dynexsemi.com fig.7 maximum permissible case temperature, double side cooled C rectangular wave fig.8 maximum permissible heatsink temperature, double side cooled C rectangular wave fig.9 maximum (limit) transient thermal impedance C junction to case (c/kw) 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0 500 1000 1500 2000 2500 3000 mean on-state current, i t(av) - (a) maximum permissible case temperature , t case - (c) d.c. 180 120 90 60 30 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0 500 1000 1500 2000 2500 3000 mean on-state current, i t(av ) - (a) maximum heatsik temperature t heatsink - ( o c) d.c. 180 120 90 60 30 0 5 10 15 20 25 30 35 0.001 0.01 0.1 1 10 100 time ( s ) thermal impedance, z thj-c ( c/kw) double side cooling anode side cooling cathode sided cooling 1 2 3 4 double side cooled r i (c/kw) 0.8342 2.6074 4.2073 4.041 t i (s) 0.008639 0.0533503 0.3309504 1.612 anode side cooled r i (c/kw) 0.9647 2.8312 4.9433 9.909 t i (s) 0.0096096 0.0627037 0.4198958 8.908 cathode side cooled r i (c/kw) 0.9285 2.9366 2.3581 26.683 t i (s) 0.0093033 0.0621535 0.3092235 5.835 z th = ? [r i x ( 1-exp. (t/t i ))] [1] ? r th(j-c) conduction tables show the increments of thermal resistance r th(j-c) when the device operates at conduction angles other than d.c. double side cooling anode side cooling cathode sided cooling ? z th (z) ? z th (z) ? z th (z) ? sine. rect. ? sine. rect. ? sine. rect. 180 1.45 0.98 180 1.43 0.97 180 1.44 0.97 120 1.68 1.40 120 1.66 1.39 120 1.66 1.39 90 1.93 1.64 90 1.90 1.62 90 1.91 1.63 60 2.16 1.90 60 2.12 1.88 60 2.14 1.89 30 2.34 2.19 30 2.30 2.15 30 2.31 2.17 15 2.42 2.34 15 2.37 2.30 15 2.39 2.31
semiconductor dcr1300l85 7 / 10 www.dynexsemi.com fig.10 multi - cycle surge current fig.11 single - cycle surge current fig.12 reverse recovery charge fig . 13 reverse recovery current 0 5000 10000 15000 20000 25000 30000 0 10 20 30 rate of decay of on-state current, di/dt - (a/us) stoed charge, q s - (uc) conditions: t j = 125 o c, v rpeak ~ 3900v, v rm ~ 2600v snubber as appropriate to control reverse voltages q smax = 5944*(di/dt) 0.4443 q smin = 4290*(di/dt) 0.5079 0 100 200 300 400 500 600 0 10 20 30 rate of decay of on-state current, di/dt - (a/us) reverse receovery current, i rr - (a) conditions: tj = 125 c, vrpeak ~ 3900v, vrm ~ 2600v snubber as appropriate to control reverse voltages i rr max =53.605*(di/dt) 0.7154 i rrmin = 47.033*(di/dt) 0.741
semiconductor dcr1300l85 8 / 10 www.dynexsemi.com fig14 gate characteristics fig. 15 gate characteristics 0 5 10 15 20 25 30 0 1 2 3 4 5 6 7 8 9 10 gate trigger current, i gt - (a) gate trigger voltage, v gt - (v) lower limit upper limit 5w 10w 20w 50w 100w 150w -40c
semiconductor dcr1300l85 9 / 10 www.dynexsemi.com package details for further package information, please contact customer services. all dimensions in mm, unless stated otherwise. do not scale. nominal weight: 1500g clamping force: 37kn 10% lead length: 420mm lead terminal connector: m4 ring package outline type code: l fig.16 package outline device maximum thickness (mm) minimum thickness (mm) dcr1374sba18 34.515 33.965 dcr1375sba28 34.59 34.04 dcr1376sba36 34.82 34.27 dcr2690l22 34.515 33.965 dcr2480l28 34.59 34.04 dcr2040l42 34.82 34.27 dcr1850l52 34.94 34.39 dcr1570l65 35.2 34.65 dcr1300l85 35.56 35.01
semiconductor dcr1300l85 10 / 10 www.dynexsemi.com important information: this publication is provided for information onl y and not for resale. the products and information in this publication are intended for use by appropriately trained technical personnel. due to the diversity of product applications, the information contained herein is provided as a general guide only and does not constitute any guarantee of suitability for use in a specific application . the user must evaluate the suitability of the product and the completeness of the product data for the application. the user is responsible for product selection and ensuri ng all safety and any warning requirements are met. should additional product information be needed please contact customer service. although we have endeavoured to carefully compile the information in this publication it may contain inaccuracies or typog raphical errors. the information is provided without any warranty or guarantee of any kind. this publication is an uncontrolled document and is subject to change without notice. when referring to it please ensure that it is the most up to date version and has not been superseded. the products are not intended for use in applications where a failure or malfunction may cause loss of life, injury or damage to property. the user must ensure that appropriate safety precautions are taken to prevent or mitigate t he consequences of a product failure or malfunction. the products must not be touched when operating because there is a danger of electrocution or severe burning. always use prot ective safety equipment such as appropriate shields for the product and wear safety glasses. even when disconnected any electric charge remaining in the product must be discharged and allowed to cool before safe handling using protective gloves. extended exposure to conditions outside the product ratings may affect reliability lead ing to premature product failure. use outside the product ratings is likely to cause permanent damage to the product. in extreme conditions, as with all semiconductors, this m ay include potentially hazardous rupture, a large current to flow or high voltage arcing, resulting in fire or explosion. appropriate application design and safety precautions should always be followed to protect persons and property. product status & product ordering: we annotate datasheets in the top right hand corner of the front page, to indicate product status if it is not yet fully approved for production. the annotations are as follows: - target information: this is the most tentative form of information and represents a very preliminary specification. no actual design work on the product has been started. provisional information: some initial development work has been performed. the datasheet represents a view of the end product based on very limited information. certain details will change. preliminary information: the produ ct design is complete and final characterisation for volume production is in progress.the datasheet represents the product as it is now understood but details may change. no annotation: the product has been approved for production and unless otherwise not ified by dynex any product ordered will be supplied to the current version of the data sheet prevailing at the time of our order acknowledgement. all products and materials are sold and services provided subject to dynexs conditions of sale, which are av ailable on request. any brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. headquarters operations dynex semiconductor limited doddington road, lincoln, lincolnshire, ln 6 3lf united kingdom. phone: +44 (0) 1522 500500 fax: +44 (0) 1522 500550 web: http://www.dynexsemi.com customer service phone: +44 (0) 1522 502753 / 502901 fax: +44 (0) 1522 50002 0 e - mail: power_solutions@dynexsemi.com ? dynex semiconductor ltd. technical documentation C not for resale .
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